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Low-dimensional Electron Systems Lab. (LESL)

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Paper accepted by Advanced Functional Materials

작성자LESL  조회수426 Date2019-12-23
Our manuscript entitled "Atomic Vacancy Control and Elemental Substitution in a Monolayer Molybdenum Disulfide for High Performance Optoelectronic Device Arrays" has been accepted for publication in Advanced Functional Materials.  


Abstract:
Defect engineering of 2D transition metal dichalcogenides (TMDCs) is
essential to modulate their optoelectrical functionalities, but there is
only few reports on defect-engineered TMDC device arrays. Herein, the
atomic vacancy control and elemental substitution in a chemical vapor
deposition (CVD)-grown molybdenum disulfide (MoS2) monolayer via mild
photon irradiation under the controlled atmospheres are reported. Raman
spectroscopy, photoluminescence, X-ray, and ultraviolet photoelectron
spectroscopy comprehensively demonstrate that the well-controlled
photoactivation delicately modulates the sulfur-to-molybdenum ratio as
well as the work function of a MoS2 monolayer. Furthermore, the atomicresolution
scanning transmission electron microscopy directly confirms that
small portions (2–4 at% corresponding to the defect density of 4.6 × 1012 to
9.2 × 1013 cm−2) of sulfur vacancies and oxygen substituents are generated
in the MoS2 monolayer while the overall atomic-scale structural integrity is
well preserved. Electronic and optoelectronic device arrays are also realized
using the defect-engineered CVD-grown MoS2 monolayer, and further
confirmed that the well-defined sulfur vacancies and oxygen substituents
effectively give rise to the selective n- and p-doping in the MoS2 monolayer,
respectively, without the trade-off in device performance. In particular, lowpercentage
oxygen-doped MoS2 devices show outstanding optoelectrical
performance, achieving a detectivity of ≈1013 Jones and rise/decay times of
0.62 and 2.94 s, respectively.
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